ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,895, issued on July 21, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device, memory system, and control method" was invented by Hajime Sano (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes memory cell transistors and a control circuit. The control circuit is configured to set a threshold voltage of each memory cell transistor to be in one of voltage ranges to store multi-bit data in each memory cell transistor. The voltage ranges include a first range corresponding to a first multi-bit value, a second range lower than the first range and corresponding to a second multi-bit value, and a third...