US Patent Issued to Sandisk Technologies on July 21 for "Reducing interference methods for 3D multiple-channel memory devices" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,894, issued on July 21, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Reducing interference methods for 3D multiple-channel memory devices" was invented by Will Li (Shanghai), Liang Li (Shanghai) and Vincent Yin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein are directed to techniques aimed at managing interference in a 3D NAND memory with a split or multiple channel configuration. Specially, it addresses the issue of program interference, where a programmed memory cell experiences disturbance from another cell within a closely configured environment."

The patent was filed on June 7, 2024, und...