ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,888, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Nonvolatile memory device, operating method of nonvolatile memory device, and memory system including nonvolatile memory device" was invented by Daeshik Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include a memory cell array, and a write driver and sense amplifier connected to the memory cell array through bit lines. The memory cell array includes a first cell area including a plurality of first memory cells arranged on a plane corresponding to a first direction and a second direction, a second cell area in...