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US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Aluminum nitride dipole dopant film for tuning multi-VT devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,066, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Aluminum nitride dipole dopant film... Read More


US Patent Issued to Applied Materials on Aug. 25 for "Titanium nitride gapfill processes for semiconductor devices" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,067, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Titanium nitride gapfill processes for semiconductor... Read More


US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Aug. 25 for "Method for producing a microelectronic device" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,068, issued on Aug. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "Method for producing a mic... Read More


US Patent Issued to STMicroelectronics International on Aug. 25 for "Process for manufacturing localized ion implants in silicon-carbide power electronic devices" (Italian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,069, issued on Aug. 25, was assigned to STMicroelectronics International N.V. (Geneva). "Process for manufacturing localized ion implants i... Read More


US Patent Issued to Infineon Technologies on Aug. 25 for "Ion beam implantation method and semiconductor device" (German, Austrian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,070, issued on Aug. 25, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Ion beam implantation method and semiconductor devi... Read More


US Patent Issued to Applied Materials on Aug. 25 for "Selectivity of boron hard masks using ion implant" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,071, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Selectivity of boron hard masks using ion implant" w... Read More


US Patent Issued to DISCO on Aug. 25 for "Processing method of bonded wafer" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,072, issued on Aug. 25, was assigned to DISCO Corp. (Tokyo). "Processing method of bonded wafer" was invented by Hayato Tanaka (Tokyo) and ... Read More


US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Method of manufacturing semiconductor device and semiconductor device having trench contact" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,073, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Method of manufacturing semiconductor device and semicon... Read More


US Patent Issued to United Microelectronics on Aug. 25 for "Patterning method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,074, issued on Aug. 25, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Patterning method" was invented by Yi Lin Tsai (T... Read More


US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,075, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Method of manufacturing semiconductor device" was invent... Read More