ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,067, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Titanium nitride gapfill processes for semiconductor devices" was invented by Muthukumar Kaliappan (Fremont, Calif.), Zhebo Chen (Santa Clara, Calif.), Michael Haverty (Mountain View, Calif.), Yongjing Lin (San Jose, Calif.), Shih Chung Chen (Cupertino, Calif.), Gang Shen (San Jose, Calif.), Alexander Jansen (Danville, Calif.) and Janardhan Devrajan (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of th...