US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Method of manufacturing semiconductor device and semiconductor device having trench contact" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,073, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing semiconductor device and semiconductor device having trench contact" was invented by Naoki Kuneshita (Matsumoto-City, Japan), Makoto Endou (Matsumoto-City, Japan) and Atsushi Yoshimoto (Matsumoto-City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type, gate trenches, a gate insulating film, gate electrodes, and an interlayer insulating film are formed. Next, a contact hole that penetrates through the interlayer insulating fi...