US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Aug. 25 for "Method for producing a microelectronic device" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,068, issued on Aug. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for producing a microelectronic device" was invented by Joel Kanyandekwe (Grenoble Cedex 09, France) and Cyrille Le Royer (Grenoble Cedex 09, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming crystalline SiC-based regions on either side of an N-type transistor channel, including: providing a substrate including a silicon-based layer having a thickness e, forming at least one masking pattern on the silicon-based layer, with the at least one masking pattern having openings, with the openings corresponding to ...