ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,070, issued on Aug. 25, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Ion beam implantation method and semiconductor device" was invented by Moriz Jelinek (Villach, Austria), Michael Hell (Erlangen, Germany), Caspar Leendertz (Munich), Kristijan Luka Mletschnig (Villach, Austria) and Hans-Joachim Schulze (Taufkirchen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substr...