Exclusive

Publication

Byline

Location

US Patent Issued to International Business Machines on Aug. 25 for "Hybrid memory on front and backside of a wafer" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,772, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Hybrid memory on front and backside of a waf... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor package" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,773, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor package" was invented by Ja... Read More


US Patent Issued to QUALCOMM on Aug. 25 for "Device having an in-substrate inductor and method for making the inductor" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,774, issued on Aug. 25, was assigned to QUALCOMM Inc. (San Diego). "Device having an in-substrate inductor and method for making the induct... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Packages with chips comprising inductor-vias and methods forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,775, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Packages with chips comprising indu... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Deep trench resistor structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,776, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Deep trench resistor structure ... Read More


US Patent Issued to International Business Machines on Aug. 25 for "Resistor structure in integrated circuit" (New York, Vermont Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,777, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Resistor structure in integrated circuit" wa... Read More


US Patent Issued to Intel on Aug. 25 for "Integrated circuits with high dielectric constant interfacial layering" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,778, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuits with high dielectric constant interfacial l... Read More


US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Semiconductor structure and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,779, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and method of forming th... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Schottky barrier diode (SBD) leakage current blocking structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,780, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Schottky barrier diode (SBD) leakag... Read More


US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Aug. 25 for "Semiconductor device and related chip and preparation method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,781, issued on Aug. 25, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Semiconductor device and related chip and prepara... Read More