ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,781, issued on Aug. 25, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).
"Semiconductor device and related chip and preparation method" was invented by Wentao Yang (Dongguan, China), Loucheng Dai (Shanghai), Chaofan Song (Shanghai), Boning Huang (Dongguan, China) and Zhihua Liu (Dongguan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of this application disclose a semiconductor device, a related chip, and a preparation method. The semiconductor device includes an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer. A density of free electrons at the N-type field stop layer is higher...