US Patent Issued to International Business Machines on Aug. 25 for "Hybrid memory on front and backside of a wafer" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,772, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Hybrid memory on front and backside of a wafer" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Takashi Ando (Eastchester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor structure. The semiconductor structure may include a top transistor, a bottom transistor stacked below the top transistor, a back-end-of-line (BEOL) memory device electrically coupled to and above the top transistor, and a backside memory device electrically couple...