US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Deep trench resistor structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,776, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Deep trench resistor structure and methods of forming the same" was invented by Shih-Yu Liao (Hsinchu City, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A deep trench resistor structure and methods of forming the same are described. The structure includes a first trench located in a first dielectric material, a first layer disposed over the first dielectric material, a second layer disposed on the first layer, a second dielectric material disposed over the second layer, and a tunable dev...