US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Schottky barrier diode (SBD) leakage current blocking structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,780, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Schottky barrier diode (SBD) leakage current blocking structure" was invented by Cheng-Hsien Wu (Hsinchu, Taiwan), Chien-Lin Tseng (Zhubei, Taiwan), Sheng Yu Lin (Taoyuan, Taiwan), Ting-Chang Chang (Hsinchu, Taiwan), Yung-Fang Tan (Hsinchu, Taiwan), Yu-Fa Tu (Hsinchu, Taiwan) and Wei-Chun Hung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interfac...