US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "Semiconductor device with gettering sites and method of manufacturing the same" (Taiwanese Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,446, issued on Sept. 1, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor device with gettering ... Read More

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Semiconductor structure and method for manufacturing the same" (Singaporean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,447, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan). "Semiconductor structure and method for manufactur... Read More

US Patent Issued to Soitec, Commissariat A L'energie Atomique Et Aux Energies Alternatives on Sept. 1 for "Donor substrate for the transfer of a thin layer and associated transfer method" (French Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,448, issued on Sept. 1, was assigned to Soitec (Bernin, France) and Commissariat A L'energie Atomique Et Aux Energies Alternatives (Paris). ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Structure and formation method of semiconductor device with backside conductive contact" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,449, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... Read More

US Patent Issued to IceMos Technology on Sept. 1 for "Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate" (British, American, Japanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,450, issued on Sept. 1, was assigned to IceMos Technology Ltd. (Great Britain). "Semiconductor device and method of forming sacrificial het... Read More

US Patent Issued to Semiconductor Energy Laboratory on Sept. 1 for "Method for manufacturing semiconductor device with an insulator layer for absorbing hyrogen from neighboring oxide and insulator layers by heat treatment" (Japanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,451, issued on Sept. 1, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Method for manufacturing semicondu... Read More

US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,452, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device and method of manufacturing... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Isolation structures in semiconductor devices" (Taiwanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,453, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Isolation structures in semiconduct... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Semiconductor device and method of manufacturing" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,454, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More

US Patent Issued to DB HiTek on Sept. 1 for "High voltage semiconductor device including isolation region" (South Korean Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,455, issued on Sept. 1, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea). "High voltage semiconductor device including isolation... Read More

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US Patent Issued to Vanguard International Semiconductor on Sept. 1 for "Semiconductor device with gettering sites and method of manufacturing the same" (Taiwanese Inventors)

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Semiconductor structure and method for manufacturing the same" (Singaporean Inventors)

US Patent Issued to Soitec, Commissariat A L'energie Atomique Et Aux Energies Alternatives on Sept. 1 for "Donor substrate for the transfer of a thin layer and associated transfer method" (French Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Structure and formation method of semiconductor device with backside conductive contact" (Taiwanese Inventors)

US Patent Issued to IceMos Technology on Sept. 1 for "Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate" (British, American, Japanese Inventors)

US Patent Issued to Semiconductor Energy Laboratory on Sept. 1 for "Method for manufacturing semiconductor device with an insulator layer for absorbing hyrogen from neighboring oxide and insulator layers by heat treatment" (Japanese Inventors)

US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Isolation structures in semiconductor devices" (Taiwanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Semiconductor device and method of manufacturing" (Taiwanese Inventors)

US Patent Issued to DB HiTek on Sept. 1 for "High voltage semiconductor device including isolation region" (South Korean Inventor)