US Patent Issued to DB HiTek on Sept. 1 for "High voltage semiconductor device including isolation region" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,455, issued on Sept. 1, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"High voltage semiconductor device including isolation region" was invented by Sung Hoon Lee (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high voltage semiconductor device includes an isolation region, in which multiple voids are formed in the isolation region along the vertical direction of the isolation region, so that the possibility of cracks occurring in the isolation region is minimized, and thus tungsten (W), etc. is prevented from penetrating into a space created by the cracks in a subsequent process and deteriorating the breakd...