US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Structure and formation method of semiconductor device with backside conductive contact" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,449, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with backside conductive contact" was invented by Chien-Hsun Lin (Kaohsiung City, Taiwan), Wen-Chiang Hong (Taipei City, Taiwan), Jiun-Jie Chao (Miaoli County, Taiwan) and Jyh-Huei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming a fin structure over a substrate. The fin structure has a base layer, and the fin structure has multiple sacrificial layers and multiple semiconductor layers laid out i...