US Patent Issued to Soitec, Commissariat A L'energie Atomique Et Aux Energies Alternatives on Sept. 1 for "Donor substrate for the transfer of a thin layer and associated transfer method" (French Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,448, issued on Sept. 1, was assigned to Soitec (Bernin, France) and Commissariat A L'energie Atomique Et Aux Energies Alternatives (Paris).

"Donor substrate for the transfer of a thin layer and associated transfer method" was invented by Larry Vincent (Grenoble, France), Shay Reboh (Grenoble, France), Lucie Le Van-Jodin (Grenoble, France), Frederic Milesi (Grenoble, France), Ludovic Ecarnot (Bernin, France), Gweltaz Gaudin (Crolles, France) and Didier Landru (Le Champ-pres-Froges, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. T...