ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,453, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures in semiconductor devices" was invented by Chien-Hsuan Liu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a fin structure having a first fin portion and a second fin portion, forming a first dielectric layer on the substrate and on sidewalls of the first fin portion, forming a second dielectric layer on the first dielectric layer, performing an oxidation process on the second fin portion to form...