ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,334, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor device and manufacturing method... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,335, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Scanning single electron transistor having a p... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,336, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Isolation module for backside power delivery" was inve... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,337, issued on Nov. 3, was assigned to Industry-University Cooperation Foundation Hanyang University ERICA CAMPUS (Gyeonggi-do, South Korea) ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,338, issued on Nov. 3, was assigned to INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS (Gyeonggi-do, South Korea) ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,339, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Technologies for atomic layer deposition for ferroelectric transi... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,340, issued on Nov. 3, was assigned to 1FINITY Inc. (Kawasaki, Japan). "Semiconductor device, semiconductor device manufacturing method, and... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,341, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Nitride semiconductor device and method for manufacturing nitride semi... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,342, issued on Nov. 3, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan). "High electron mobility transistor" was inven... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,343, issued on Nov. 3, was assigned to Transphorm Technology Inc. (Goleta, Calif.). "N-polar devices including a depleting layer with improv... Read More