ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,336, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Isolation module for backside power delivery" was invented by Veeraraghavan S. Basker (Schenectady, N.Y.), Gregory Costrini (Flanders, N.J.), Ashish Pal (San Ramon, Calif.), Benjamin Colombeau (Salem, Mass.) and Balasubramanian Pranatharthiharan (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a portion of a gate-all-around field-effect transistor (GAA FET) includes forming placeholders, each interfacing with an extension region via a cap layer, in recesses formed in portions of a substrate isolated by shallow trench isolations...