US Patent Issued to Transphorm Technology on Nov. 3 for "N-polar devices including a depleting layer with improved conductivity" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,343, issued on Nov. 3, was assigned to Transphorm Technology Inc. (Goleta, Calif.).

"N-polar devices including a depleting layer with improved conductivity" was invented by Geetak Gupta (Goleta, Calif.), Umesh Mishra (Montecito, Calif.), Davide Bisi (Goleta, Calif.), Rakesh K. Lal (Isla Vista, Calif.) and David Michael Rhodes (Santa Barbara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are lateral III-N (e.g., GaN) devices having a III-N depleting layer. A circuit includes a depletion-mode transistor with a source connected to a drain of an enhancement-mode transistor. The gate of the depletion-mode transistor and the gate o...