US Patent Issued to 1FINITY on Nov. 3 for "Semiconductor device, semiconductor device manufacturing method, and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,340, issued on Nov. 3, was assigned to 1FINITY Inc. (Kawasaki, Japan).

"Semiconductor device, semiconductor device manufacturing method, and electronic device" was invented by Shirou Ozaki (Yamato, Japan), Naoya Okamoto (Isehara, Japan), Yusuke Kumazaki (Atsugi, Japan), Toshihiro Ohki (Hadano, Japan) and Naoki Hara (Sagamihara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a protection film having an opening and covering a semiconductor layer, which is formed on a side of a surface of a substrate, on an opposite side of the substrate. An insulating film containing silicon is used for the protection film. A gate ...