US Patent Issued to Intel on Nov. 3 for "Technologies for atomic layer deposition for ferroelectric transistors" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,339, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Technologies for atomic layer deposition for ferroelectric transistors" was invented by Scott B. Clendenning (Portland, Ore.), Sudarat Lee (Hillsboro, Ore.), Kevin P. O'Brien (Portland, Ore.), Rachel A. Steinhardt (Beaverton, Ore.), John J. Plombon (Portland, Ore.), Arnab Sen Gupta (Hillsboro, Ore.), Charles C. Mokhtarzadeh (Portland, Ore.), Gauri Auluck (Hillsboro, Ore.), Tristan A. Tronic (Aloha, Ore.), Brandon Holybee (Portland, Ore.), Matthew V. Metz (Portland, Ore.), Dmitri Evgenievich Nikonov (Beaverton, Ore.) and Ian Alexander Young (Olympia, Wash.).

According to the abstract* released by the U.S. Pa...