ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,152, issued on June 16, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory cell and semiconductor memory device with the sam... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,153, issued on June 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device including supporting layers... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,154, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices, and related methods of forming mic... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,155, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Method of manufacturing semiconductor memory... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,156, issued on June 16, was assigned to Intel Corp. (Santa Clara, Calif.). "Interconnect structures for integrated circuits" was invented b... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,157, issued on June 16, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and method ... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,158, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Intak ... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,159, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Hongs... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,160, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices and methods of manufac... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,161, issued on June 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOG... Read More