US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES on June 16 for "Capacitor structure and method for manufacturing same, semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,161, issued on June 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES Co. LTD. (Beijing).

"Capacitor structure and method for manufacturing same, semiconductor structure and method for manufacturing same" was invented by Gyuseog Cho (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure includes a substrate and a first electrode, a first dielectric layer and a second electrode arranged on the substrate, in which the first electrode includes at least two sub-electrodes continuously arranged in a direction perpendicular to the substrate and connected ...