ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,157, issued on June 16, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).
"Semiconductor device and method of forming the same" was invented by Li-Wei Feng (Quanzhou City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, plugs and a storage node pad structure. The storage node pad structure includes first, second and third extension pads and a margin extension pad. The first extension pads are separately arranged as an array and electrically connected with the plugs. The margin extension pad is disposed outside the first extension pads. The second and third extension pa...