US Patent Issued to NANYA TECHNOLOGY on June 16 for "Semiconductor device including supporting layers to reinforce 3D memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,153, issued on June 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device including supporting layers to reinforce 3D memory structure" was invented by Shih-Fan Kuan (Taoyuan City, Taiwan), Hsu-Cheng Fan (Taoyuan City, Taiwan), Jiann-Jong Wang (New Taipei City, Taiwan), Chung-Hsin Lin (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a first bit line and a second bit line. The ...