ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,878, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor manufacturing apparatus" was i... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,879, issued on Aug. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "System and method for detecting se... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,880, issued on Aug. 18, was assigned to CANON K.K. (Tokyo). "Bonding apparatus, bonding method, estimation method, and article manufacturin... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,881, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Photoresist having strengthenin... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,882, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including gate lines... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,883, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,884, issued on Aug. 18, was assigned to Tokyo Electron Ltd. (Tokyo). "Back end of line (BEOL) interconnection approach" was invented by Pen... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,885, issued on Aug. 18, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor device manufacturing method" was invented by Kazuhiro Takahata... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,886, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and method of manufact... Read More
ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,887, issued on Aug. 18, was assigned to Lam Research Corp. (Fremont, Calif.). "Method of forming expandable doped oxide films for advanced ... Read More