US Patent Issued to SAMSUNG ELECTRONICS on Aug. 18 for "Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,882, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same" was invented by Taekyung Yoon (Hwaseong-si, South Korea), Youngjun Kim (Suwon-si, South Korea), Hunyoung Bark (Suwon-si, South Korea), Eun-Ok Lee (Suwon-si, South Korea), Jaejin Lee (Goyang-si, South Korea) and Dongju Chang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active ...