ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,886, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor devices and method of manufacturing the same" was invented by Kyuhoon Choi (Suwon-si, South Korea), Seungseok Ha (Suwon-si, South Korea), Seokmyeong Kang (Suwon-si, South Korea) and Seowoo Nam (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming conductive patterns on which stopper layers are formed, respectively, on a substrate including a first region having a first pattern density and a second region having a second pattern density lower than the first patte...