ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,883, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and methods of forming the same" was invented by Chih-Chao Chou (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Shang-Wen Chang (Hsinchu, Taiwan) and Yi-Hsun Chiu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and methods of forming the same are described. In some embodiments, the method includes depositing an etch stop layer on a substrate, depositing a first substrate layer on the etch stop layer, forming a plurality of acti...