ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,517, issued on July 28, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device and method for manufacturing a... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,518, issued on July 28, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,519, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Transistor unit including shared gate struct... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,520, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Coupled inductors with GaN switches in GaN 3D power block" was ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,521, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with trench contact depopulation ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,522, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "CMOS well regions with high dopant ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,523, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Method of manufacturing semiconductor device... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,524, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Stacked transistor isolation featur... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,525, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Yo... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,526, issued on July 28, was assigned to MediaTek Inc. (Hsinchu City, Taiwan). "Bipolar junction transistor (BJT) structure" was invented by... Read More