US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Stacked transistor isolation features and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,524, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked transistor isolation features and methods of forming the same" was invented by Chun Wei Chen (Hsinchu, Taiwan), Zheng Hui Lim (Hsinchu, Taiwan), Yen Chuang (Baoshan Township, Taiwan), Shun-Siang Jhan (Kaohsiung City, Taiwan), Yi-Ching Hung (Hsinchu, Taiwan) and Ji-Yin Tsai (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes: patterning a lower semiconductor nanostructure, an upper semiconductor nanostructure, and a dummy nanostructure, the dummy nanostructure disposed between the low...