US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "CMOS well regions with high dopant activation level and reduced extended defects" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,522, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"CMOS well regions with high dopant activation level and reduced extended defects" was invented by Yi-Fan Chen (New Taipei City, Taiwan), Sen-Hong Syue (Hsinchu County, Taiwan), Huicheng Chang (Tainan City, Taiwan) and Yee-Chia Yeo (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating an integrated circuit (IC) is provided. The method includes the following steps: providing a substrate; forming a p-well region in the substrate; forming an n-well region in the substrate; conducting a microwave annealing at a fi...