US Patent Issued to Mitsubishi Electric on July 28 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,518, issued on July 28, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Koichi Nishi (Tokyo), Kosuke Sakaguchi (Tokyo) and Kazuya Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An adjacent active trench in an IGBT region and an adjacent capacitance adjustment trench in a diode region are each provided in a stripe shape extending in a Y direction in a plan view. Each of a plurality of crossing trenches extends in an X direction orthogonal to the Y direction in a plan view and is provided in a stripe shape. Each of the plurality of crossing trenches is provid...