ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,523, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Method of manufacturing semiconductor device" was invented by Jangeun Lee (Hwaseong-si, South Korea), Hyojung Noh (Cheonan-si, South Korea), Minwoo Song (Seongnam-si, South Korea), Yongho Ha (Hwaseong-si, South Korea) and Jeongwon Hwang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes an forming a trench in a substrate, forming a gate dielectric layer on the trench, forming a gate layer on the gate dielectric layer, an...