ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,429, issued on July 21, was assigned to Siltectra GmbH (Dresden, Germany). "Method for producing a layer of solid material" was invented by... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,430, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo). "Formation of low-temperature and high-temperature in-situ doped sourc... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,431, issued on July 21, was assigned to KIOXIA Corp. (Tokyo). "Method of manufacturing a semiconductor device by filling mask- defined tren... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,432, issued on July 21, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,433, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Low resistance interconnect fea... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,434, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Surface depassivation with thermal etch after nitrog... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,435, issued on July 21, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Self-aligned contact based via to backside p... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,436, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor interconnection s... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,437, issued on July 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor fabrication method with improve... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,438, issued on July 21, was assigned to Celestial AI Inc. (Santa Clara, Calif.). "Via formed in a wafer using a front-side and a back-side ... Read More