ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,432, issued on July 21, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Kiyoshi Endo (Tokyo) and Takashi Moriyama (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first element disposed in a first region and including a high-dielectric-constant insulating film, a second element disposed in a second region, and an element isolation portion disposed between the first region and the second region and electrically isolating between the first element and the second element. A step portion is formed on the surface of the element isolation ...