US Patent Issued to Yangtze Memory Technologies on July 21 for "Semiconductor fabrication method with improved deposition quality and semiconductor structure thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,437, issued on July 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor fabrication method with improved deposition quality and semiconductor structure thereof" was invented by Rui Song (Wuhan, China), Jie Pan (Wuhan, China), Peng Ding (Wuhan, China), Jiewen Zhang (Wuhan, China) and Xufang Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a base layer and conductive element in a dielectric region. The base layer includes a first material and is perpendicular to a direction. The conductive element includes a conductive material and contacts the base layer and the dielectric regi...