US Patent Issued to Tokyo Electron on July 21 for "Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures" (New York, Texas Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,430, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures" was invented by Jeffrey Smith (Clifton Park, N.Y.), Hiroaki Niimi (Cohoes, N.Y.), Daniel Chanemougame (Albany, N.Y.), Lars Liebmann (Albany, N.Y.), H. Jim Fulford (Marianna, N.Y.), Mark I. Gardner (Cedar Creek, Texas), Kandabara Tapily (Albany, N.Y.) and Anton J. Devilliers (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques herein provide thermal processing solutions applicable to ...