ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,461, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device and electronic sys... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,462, issued on July 28, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor device and method for manufacturing the same" was invented by ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,463, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Integrated circuit with thin fi... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,464, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,465, issued on July 28, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method and systems for forming device structures includ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,466, issued on July 28, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlingt... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,467, issued on July 28, was assigned to GRAPHENEA SEMICONDUCTOR S.L.U. (Donostia-San Sebastian, Spain). "Graphene device and method of fabr... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,468, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Ta... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,469, issued on July 28, was assigned to Imec vzw (Leuven, Belgium). "Method for forming a FIN-based field-effect transistor using opposite-... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,470, issued on July 28, was assigned to ULTRABAND TECHNOLOGIES INC. (Zhubei City, Taiwan). "Method for manufacturing high-electron-mobility... Read More