ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,462, issued on July 28, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor device and method for manufacturing the same" was invented by Kiichi Tachi (Yokkaichi Mie, Japan), Ryota Nihei (Yokkaichi Mie, Japan) and Yoshikazu Hosomura (Kamakura Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a metal layer disposed above a transistor on a first substrate. The metal layer includes a first region extending in a first direction and a second region that has a width in the first direction smaller than the first region and protrudes from the first region in a second direction, and has a first corner portion hav...