US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,464, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Ming-Hsun Lin (Hsinchu, Taiwan) and Yu Jiang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and a deep trench capacitor structure. The deep trench capacitor structure includes a plurality of electrode layers and a plurality of dielectric layers alternately stacked, a contact via and at least one pair of spacers. The electrode layers and the dielectric layers form a mirror staircase portion over the substrate and a d...