US Patent Issued to ULTRABAND TECHNOLOGIES on July 28 for "Method for manufacturing high-electron-mobility transistor" (Taiwanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,470, issued on July 28, was assigned to ULTRABAND TECHNOLOGIES INC. (Zhubei City, Taiwan).

"Method for manufacturing high-electron-mobility transistor" was invented by Chan-Shin Wu (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a high-electron-mobility transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a channel layer and a barrier layer on the channel layer; forming a protective layer on the semiconductor substrate at a position corresponding to a gate opening; forming an overlay layer on the semiconductor substrate in an area aro...