US Patent Issued to XI'AN JIAOTONG UNIVERSITY on May 19 for "Low-temperature processing method for improving 4H-SIC/SIO 2 interface based on supercritical oxynitride and use thereof" (Chinese Inventors)

Posted On: 2026-05-19

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,201, issued on May 19, was assigned to XI'AN JIAOTONG UNIVERSITY (Xi'an, China). "Low-temperature processing method for improving 4H-SIC/SIO... Read More

US Patent Issued to STMicroelectronics International on May 19 for "Front side OHMIC contact formation for SiC device" (Italian Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,202, issued on May 19, was assigned to STMicroelectronics International N.V. (Geneva). "Front side OHMIC contact formation for SiC device" w... Read More

US Patent Issued to MITSUMI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventor)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,203, issued on May 19, was assigned to MITSUMI ELECTRIC Co. LTD. (Tokyo). "Silicon carbide semiconductor device" was invented by Kosuke Uchi... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor device and electronic device including the same" (South Korean Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,204, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device and electronic device ... Read More

US Patent Issued to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT on May 19 for "Nitride semiconductor device" (Japanese Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,205, issued on May 19, was assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co. LTD. (Osaka, Japan). "Nitride semiconductor device" wa... Read More

US Patent Issued to DB HiTek on May 19 for "Power semiconductor device and manufacturing method thereof" (South Korean Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,206, issued on May 19, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea). "Power semiconductor device and manufacturing method the... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor devices and methods of fabricating the same" (Taiwanese Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,207, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor devices and methods of ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Method for forming semiconductor device structure with gate stack" (Taiwanese Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,208, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming semiconductor ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,209, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufact... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Isolation regions with non-uniform depths and methods forming the same" (Taiwanese Inventor)

Posted On: 2026-05-19

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ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,210, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Isolation regions with non-uniform de... Read More

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US Patent Issued to XI'AN JIAOTONG UNIVERSITY on May 19 for "Low-temperature processing method for improving 4H-SIC/SIO 2 interface based on supercritical oxynitride and use thereof" (Chinese Inventors)

US Patent Issued to STMicroelectronics International on May 19 for "Front side OHMIC contact formation for SiC device" (Italian Inventors)

US Patent Issued to MITSUMI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor device and electronic device including the same" (South Korean Inventors)

US Patent Issued to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT on May 19 for "Nitride semiconductor device" (Japanese Inventors)

US Patent Issued to DB HiTek on May 19 for "Power semiconductor device and manufacturing method thereof" (South Korean Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor devices and methods of fabricating the same" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Method for forming semiconductor device structure with gate stack" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Isolation regions with non-uniform depths and methods forming the same" (Taiwanese Inventor)