US Patent Issued to MITSUMI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,203, issued on May 19, was assigned to MITSUMI ELECTRIC Co. LTD. (Tokyo).

"Silicon carbide semiconductor device" was invented by Kosuke Uchida (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a first passivation film formed on gate and source pads on a principal surface of a silicon carbide substrate, and a second passivation film formed on the first passivation film. The first passivation film includes a first interlayer insulation between the gate and source pads, a first opening exposing the gate pad and having a first edge, and a second opening exposing the source pad and having a second...