ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,209, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Te-Chih Hsiung (Taipei City, Taiwan), Yun-Hua Chen (Hsinchu County, Taiwan), Bing-Sian Wu (Hsinchu City, Taiwan), Yi-Hsuan Chiu (Hsinchu City, Taiwan), Yu-Wei Chang (Hsinchu City, Taiwan), Wen-Kuo Hsieh (Taipei City, Taiwan), Chih-Yuan Ting (Taipei City, Taiwan) and Huan-Just Lin (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor...