US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Isolation regions with non-uniform depths and methods forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,210, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation regions with non-uniform depths and methods forming the same" was invented by Tzu-Ging Lin (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of semiconductor structures over a semiconductor substrate, forming a dummy gate stack on top surfaces and sidewalls of the plurality of semiconductor structures, forming gate spacers on sidewalls of the dummy gate stack, and etching a first portion of the dummy gate stack to form a through-gate trench in the dummy gate stack. The dummy gate s...