US Patent Issued to XI'AN JIAOTONG UNIVERSITY on May 19 for "Low-temperature processing method for improving 4H-SIC/SIO 2 interface based on supercritical oxynitride and use thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,201, issued on May 19, was assigned to XI'AN JIAOTONG UNIVERSITY (Xi'an, China).

"Low-temperature processing method for improving 4H-SIC/SIO 2 interface based on supercritical oxynitride and use thereof" was invented by Weihua Liu (Xi'an, China), Menghua Wang (Xi'an, China), Li Geng (Xi'an, China), Mingchao Yang (Xi'an, China), Yue Hao (Xi'an, China) and Songquan Yang (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a low-temperature processing method for improving a 4H-SiC/SiO2 interface based on a supercritical oxynitride, and use thereof. The method includes: performing standard cleaning on a silicon carbide sample to be ...