ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,213, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-chu, Taiwan). "FinFETs with low source/drain cont... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,214, issued on July 21, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device with sp... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,215, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with gate i... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,216, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,217, issued on July 21, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Group III nitride semiconductor device with first and second conduct... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,218, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structures and manufacturing methods ther... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,220, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure comprising a channel layer, a b... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,221, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and manufacturing method thereo... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,222, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Inner spacer liner for gate-all-around device" was i... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,223, issued on July 21, was assigned to Sony Group Corp. (Kanagawa, Japan). "Multi-threshold voltage devices and associated techniques and ... Read More